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High Purity Dichlorosilane DCS (SiH2Cl2) Specialty Gases

  • DOT Shipping Name Poison Inhalation Hazard
  • DOT Classification 2.3
  • DOT Label Poison Gas, Nonflammable Gas
  • UN Number UN 2189
  • CAS No. 4109-96-0
  • CGA/DISS/JIS 678/636/W22-14L
  • Shipped as Liquefied Gas

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Specifications 

Purity , % 99 99.9
Typical Resistivity  ≥ 200 ohm-cm ≥ 400 ohm-cm
Monochlorosilane  ≤ 0.2% ≤ 100 pm
Trichlorosilane  ≤ 0.5% ≤ 200 pm
Silicon Tetrachloride  ≤ 0.1% ≤ 100 pm
Other Chlorosilanes  ≤ 1 wt % ≤ 500 pm

Technical Information

Cylinder State @ 21.1°C  Liquid
Flammable Limits In Air  4.1-98.8%
Auto Ignition Temperature (°C ) 100
Molecular Weight (g/mol) 101.01
Specific gravity (air =1) 3.47
Critical Temperature ( °C ) 175.85
Critical Pressure ( psig ) 678.2

Description

Dichlorosilane, or DCS as it is commonly known, is a chemical compound with the formula H2SiCl2. In its major use, it is mixed with ammonia (NH3) in LPCVD chambers to grow silicon nitride in semiconductor processing. A higher concentration of DCS·NH3 (i.e. 16:1), usually results in lower stress nitride films.

Dichlorosilane must be ultrapurified and concentrated in order to be used for the manufacturing of semiconducting epitaxial silicon layers, which are used for microelectronics. The buildup of the silicon layers produces thick epitaxial layers, which creates a strong structure.Dichlorosilane is used as a starting material for semiconducting silicon layers found in microelectronics. It is used because it decomposes at a lower temperature and has a higher growth rate of silicon crystals.

It is a chemically active gas, which will readily hydrolyze and self ignite in air. Dichlorosilane is also very toxic, and preventative measures must be used for any experiment involving the use of the chemical.Safety hazards also includes skin and eye irritation and inhalation.

Applications

● SiH2CL2 is silicon precursor gas used in combination with ammonia for silicon nitride chemical vapor deposition ( CVD ).

● Also used for epitaxial silicon deposition .

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